FDC6420C MOSFET 20V 3.0A






         These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.




Q1 3.0 A, 20V

RDS(on) = 70 mΩ@ VGS = 4.5 V

RDS(on) = 95 mΩ @ VGS = 2.5 V

Q2 –2.2 A, 20V.

RDS(on) = 125 mΩ@ VGS = -4.5 V

RDS(on) = 190 mΩ @ VGS = -2.5 V

Low gate charge 

High performance trench technology for extremely low RDS(ON)

SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).



FET Type    N and P-Channel

FET Feature    Logic Level Gate

Drain to Source Voltage (Vdss)    20V

Current - Continuous Drain (Id) @ 25° C    3A, 2.2A

Rds On (Max) @ Id, Vgs    70 mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id    1.5V @ 250µA

Gate Charge (Qg) @ Vgs    4.6nC @ 4.5V

Input Capacitance (Ciss) @ Vds    324pF @ 10V

Power - Max    700mW

Mounting Type    Surface Mount

Package / Case    SOT-23-6 Thin, TSOT-23-6

Supplier Device Package    6-SSOT

Yorum Yap

Lütfen yorum yazmak için oturum açın ya da kayıt olun.

FDC6420C MOSFET 20V 3.0A

  • Marka: FAIRCHILD
  • Ürün Kodu: FDC6420C
  • Stok Durumu: Stokta var
  • Fiyat : 2,00TL
  • KDV Dahil : 2,36TL

Etiketler: FDC6420C MOSFET 20V 3.0A