20V 3.0A MOSFET N/P-CH
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Q1 3.0 A, 20V
RDS(on) = 70 mΩ@ VGS = 4.5 V
RDS(on) = 95 mΩ @ VGS = 2.5 V
Q2 –2.2 A, 20V.
RDS(on) = 125 mΩ@ VGS = -4.5 V
RDS(on) = 190 mΩ @ VGS = -2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25° C 3A, 2.2A
Rds On (Max) @ Id, Vgs 70 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 4.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 324pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-SSOT